1996: Scientific School Certificate at the Scientific Liceo “B. Russell" in Cles (TN), Italy, with final evaluation of 60/60.
2002: M.S. degree in Materials Engineering (Laurea in Ingegneria dei Materiali) at the University of Trento with final evaluation of 110/110 cum laude.
2006: PhD in Information and Communication Technologies at the University of Trento. The PhD dissertation was titled “Design and characterization of novel silicon photodetectors for 3D imaging applications".
Attività di ricerca
The research activity of Lucio Pancheri has been related to the design, modeling, fabrication and experimental characterization of electron devices and circuits, focusing on the following topics:
1. Single-Photon Avalanche Diodes in CMOS technology
This activity can be divided in a device-related part aimed at the realization of Single-Photon Avalanche Diode (SPAD) detectors in CMOS technologies and a circuit/system work devoted to the fabrication of SPAD-based pixel arrays for bio-medical and 3D imaging applications.
The main results have been:
2. CMOS image sensors for 3D Imaging Applications
The core of this activity has been the design and testing of innovative electro-optical demodulators in standard CMOS technologies for Time of Flight 3D imaging applications. Lucio Pancheri has contributed to the whole development chain of 3D cameras based on the proposed devices, including TCAD device simulations, pixel and image sensor circuit simulations, design of the test boards, design and characterization of the illumination unit and image sensor testing.
The main results have been:
3. Linear-mode Avalanche Photodiodes in CMOS technology
Within this activity, low noise APDs have been designed and fabricated in different standard CMOS technology nodes. A 64x64 monolithic APD image sensor for Time of Flight 3D ranging has been implemented in a standard 0.35um CMOS technology and a 3D camera based on the sensor has been demonstrated.
4. Radiation detectors in high resistivity silicon
Lucio Pancheri has contributed to the design and characterization of radiation detectors with monolithically integrated JFET-based readout channels, to be used in high resolution X-ray spectroscopy and X-ray imaging for biomedical and industrial applications.
He has also contributed to the characterization of analog silicon photomultipliers (SiPM) fabricated at FBK for medical physics applications (Positron Emission Tomography), with special focus on the measurement of timing resolution.
5. Organic photodiodes
The long-term goal of this activity, which has been conducted in collaboration with the university of Munich, Germany, is the realization of an image sensor with tunable spectral response based on hybrid CMOS-organic technology. Within this activity, Lucio Pancheri has designed a readout chip in a standard CMOS technology tailored for the realization of a prototype hybrid image sensor including organic photodiodes. He has also contributed to the packaging and characterization of the prototype sensor.
6. Porous silicon gas sensors and optical devices
The main goal of this experimental activity was the exploitation of porous silicon multilayers in gas sensing applications. In the first part of the activity, porous silicon multilayers (Bragg mirrors, Fabry Perot optical microcavities) were fabricated and the characterization of their electrical and optical properties was carried out. Successively, the variation of these properties in the presence of various gaseous species was measured to evaluate the possibility of employing this material in gas sensors for environmental monitoring. The fabricated structures exhibited very interesting optical properties and very high sensitivity towards NO2 air pollutant.
10 selected publications