Lucio Pancheri


Dipartimento di Ingegneria Industriale

Area CUN: Ingegneria industriale e dell'informazione (09)
Settore scientifico disciplinare: ELETTRONICA (ING-INF/01)

Via Sommarive, 9 - 38123 Povo
tel. 0461 281532
lucio.pancheri[at]unitn [dot] it

1996: Scientific School Certificate at the Scientific Liceo “B. Russell" in Cles (TN), Italy, with final evaluation of 60/60.

2002: M.S. degree in Materials Engineering (Laurea in Ingegneria dei Materiali) at the University of Trento with final evaluation of 110/110 cum laude.  

2006: PhD in Information and Communication Technologies at the University of Trento. The PhD dissertation was titled “Design and characterization of novel silicon photodetectors for 3D imaging applications".

Attività di ricerca

The research activity of Lucio Pancheri has been related to the design, modeling, fabrication and experimental characterization of electron devices and circuits, focusing on the following topics:

1. Single-Photon Avalanche Diodes in CMOS technology

This activity can be divided in a device-related part aimed at the realization of Single-Photon Avalanche Diode (SPAD) detectors in CMOS technologies and a circuit/system work devoted to the fabrication of SPAD-based pixel arrays for bio-medical and 3D imaging applications.

The main results have been:

  • Development of SPADs with good characteristics in different CMOS technology nodes. During the last years, functional SPADs in 0.8um, 0.7um, 0.35um and 0.15um CMOS technologies have been successfully demonstrated. 
  • Design and fabrication of SPAD-based pixel arrays in standard CMOS technologies. The realized sensors consist of arrays of SPADs with time-resolved readout channels, which enable single photon imaging with sub-ns resolution. The application of these sensors as a low-cost tool for Fluorescence Lifetime Imaging (FLIM), both in biosensors and in advanced microscopy systems has been studied.

2. CMOS image sensors for 3D Imaging Applications

The core of this activity has been the design and testing of innovative electro-optical demodulators in standard CMOS technologies for Time of Flight 3D imaging applications. Lucio Pancheri has contributed to the whole development chain of 3D cameras based on the proposed devices, including TCAD device simulations, pixel and image sensor circuit simulations, design of the test boards, design and characterization of the illumination unit and image sensor testing.

The main results have been:

  • Development of demodulating detectors in deep submicron technologies. In particular, it is worth mentioning the porting of Current-Assisted Photonic Demodulator to a 0.18um CMOS process and the realization of a novel buried-channel demodulator in a 0.18um CMOS technology.
  • Design and fabrication of fully functional 3D camera systems based on the previously mentioned demodulating detectors.

3. Linear-mode Avalanche Photodiodes in CMOS technology

Within this activity, low noise APDs have been designed and  fabricated in different standard CMOS technology nodes. A 64x64 monolithic APD image sensor for Time of Flight 3D ranging has been implemented in a standard 0.35um CMOS technology and a 3D camera based on the sensor has been demonstrated.

4. Radiation detectors in high resistivity silicon

Lucio Pancheri has contributed to the design and characterization of radiation detectors with monolithically integrated JFET-based readout channels, to be used in high resolution X-ray spectroscopy and X-ray imaging for biomedical and industrial applications.

He has also contributed to the characterization of analog silicon photomultipliers (SiPM) fabricated at FBK for medical physics applications (Positron Emission Tomography), with special focus on the measurement of timing resolution.

5. Organic photodiodes

The long-term goal of this activity, which has been conducted in collaboration with the university of Munich, Germany,  is the realization of an image sensor with tunable spectral response based on hybrid CMOS-organic technology. Within this activity, Lucio Pancheri has designed a readout chip in a standard CMOS technology tailored for the realization of a prototype hybrid image sensor including organic photodiodes. He has also contributed to the packaging and characterization of the prototype sensor.

6. Porous silicon gas sensors and optical devices

The main goal of this experimental activity was the exploitation of porous silicon multilayers in gas sensing applications. In the first part of the activity, porous silicon multilayers (Bragg mirrors, Fabry Perot optical microcavities) were fabricated and the characterization of their electrical and optical properties was carried out. Successively, the variation of  these properties in the presence of various gaseous species was measured to evaluate the possibility of employing this material in gas sensors for environmental monitoring. The fabricated structures exhibited very interesting optical properties and very high sensitivity towards NO2 air pollutant.


10 selected publications

  • L. Pancheri, D. Stoppa, G.-F. Dalla Betta, "Characterization and Modeling of Breakdown Probability in Sub-Micrometer CMOS SPADs," IEEE Journal of Selected Topics in Quantum Electronics , Vol. 20, No. 6, pp. 1-8, 2014.
  • L. Pancheri, G.-F. Dalla Betta, D. Stoppa, "Low-Noise Avalanche Photodiode With Graded Junction in 0.15-um CMOS Technology," IEEE Electron Device Letters , Vol. 35, No. 5, pp. 566-568, May 2014.
  • L. Pancheri, N. Massari, D. Stoppa, "SPAD Image Sensor With Analog Counting Pixel for Time-Resolved Fluorescence Detection", IEEE Transactions on Electron Devices, Vol.60, No.10, pp. 3442 - 3449, 2013.
  • D. Baierl, L. Pancheri, M. Schmidt, D. Stoppa, G.-F. Dalla Betta, G. Scarpa, P. Lugli, "A hybrid CMOS-imager with a solution processable polymer as photoactive layer" in Nature Communications, v. 3:1175, p. 1-8, 2012.
  • L. Pancheri, N. Massari, M. Perenzoni, M. Malfatti, D. Stoppa, “A QVGA-Range Image Sensor Based on Buried-Channel Demodulator Pixels in 0.18μm CMOS with Extended Dynamic Range”, 2012 ISSCC Dig. Tech. Papers, San Francisco, CA, USA, 2012.
  • D. Stoppa, N. Massari, L. Pancheri, M. Malfatti, M. Perenzoni, L. Gonzo, “A Range Image Sensor Based on 10-um Lock-In Pixels in 0.18-um CMOS Imaging Technology”, IEEE Journal of Solid-State Circuits, Vol. 46, No. 1, pp. 248-258, 2011.
  • G.-F. Dalla Betta, S. Donati, Q.D. Hossain, G. Martini, G., L. Pancheri, D. Saguatti, D. Stoppa, G. Verzellesi, “Design and Characterization of Current-Assisted Photonic Demodulators in 0.18-um CMOS Technology”, IEEE Transactions on Electron Devices, Vol. 58, No. 6, pp. 1702-1709, 2011.
  • M. Perenzoni, N. Massari, D. Stoppa, L. Pancheri, M. Malfatti, L. Gonzo, “A 160x120-Pixels Range Camera With In-Pixel Correlated Double Sampling and Fixed-Pattern Noise Correction”, IEEE Journal of Solid-State Circuits, Vol. 46, No. 7, pp. 1672-1681, 2011.
  • D. Stoppa, D. Mosconi, L. Pancheri and L. Gonzo, “Single-Photon Avalanche Diode CMOS Sensor for Time-Resolved Fluorescence Measurements”, IEEE Sensors Journal, vol. 9, no. 9, pp. 1084-1090, 2009.
  • L. Pancheri, D. Stoppa, M. Scandiuzzo and G.-F. Dalla Betta, “Low Noise Avalanche Photodiode in Standard CMOS Technology”, IEEE Transactions of Electron Devices, vol. 55 pp. 457-461, 2008.